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2N5050

Description
2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66
Categorysemiconductor    Discrete semiconductor   
File Size122KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2N5050 Overview

2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66

2N5050 Parametric

Parameter NameAttribute value
Maximum collector current2 A
Maximum Collector-Emitter Voltage150 V
Number of terminals2
stateActive
Shell connectionCOLLECTOR
structureSINGLE
Minimum DC amplification factor25
jedec_95_codeTO-66
jesd_30_codeO-MBFM-P2
Number of components1
Maximum operating temperature175 Cel
Packaging MaterialsMETAL
packaging shapeROUND
Package SizeFLANGE MOUNT
larity_channel_typeNPN
wer_dissipation_max__abs_40 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Rated crossover frequency10 MHz
vcesat_max1 V
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-66 package
・High
breakdown voltage
・Excellent
safe operating area
APPLICATIONS
・Designed
for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5050 2N5051 2N5052
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
电半
PARAMETER
导½
CONDITIONS
2N5050
2N5051
Open emitter
Collector-base voltage
V
CEO
Collector-emitter voltage
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
HA
INC
GS
N
2N5050
2N5051
2N5052
2N5052
MIC
E
TOR
UC
ND
O
VALUE
125
150
200
125
150
200
7
2
UNIT
V
Open base
V
Open collector
V
A
W
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
7.0
UNIT
℃/W

2N5050 Related Products

2N5050 2N5051 2N5052
Description 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66
Maximum collector current 2 A 2 A 2 A
Maximum Collector-Emitter Voltage 150 V 150 V 150 V
Number of terminals 2 2 2
state Active Active Active
Shell connection COLLECTOR COLLECTOR COLLECTOR
structure SINGLE SINGLE SINGLE
Minimum DC amplification factor 25 25 25
jedec_95_code TO-66 TO-66 TO-66
jesd_30_code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1
Maximum operating temperature 175 Cel 175 Cel 175 Cel
Packaging Materials METAL METAL METAL
packaging shape ROUND ROUND ROUND
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
larity_channel_type NPN NPN NPN
wer_dissipation_max__abs_ 40 W 40 W 40 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors Other Transistors
surface mount NO NO NO
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON
Rated crossover frequency 10 MHz 10 MHz 10 MHz
vcesat_max 1 V 1 V 1 V
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