2N5052 datasheet, PDF - EEWORLD Datasheet

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2N5052: Description2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66; Categorysemiconductor Discrete semiconductor; File Size122KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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2N5052 Overview

2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66

2N5052 Parametric

Parameter Name	Attribute value
Maximum collector current	2 A
Maximum Collector-Emitter Voltage	150 V
Number of terminals	2
state	Active
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	25
jedec_95_code	TO-66
jesd_30_code	O-MBFM-P2
Number of components	1
Maximum operating temperature	175 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	FLANGE MOUNT
larity_channel_type	NPN
wer_dissipation_max__abs_	40 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	NOT SPECIFIED
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Rated crossover frequency	10 MHz
vcesat_max	1 V

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Product Specification

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-66 package

・High

breakdown voltage

・Excellent

safe operating area

APPLICATIONS

・Designed

for driver circuits,switching

and amplifier applications

PINNING

1

2

3

Base

Emitter

Collector

DESCRIPTION

2N5050 2N5051 2N5052

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=

℃)

SYMBOL

V

CBO

电半

固

PARAMETER

导½

CONDITIONS

2N5050

2N5051

Open emitter

Collector-base voltage

V

CEO

Collector-emitter voltage

V

EBO

I

C

P

D

T

j

T

stg

Emitter-base voltage

Collector current

HA

INC

GS

N

2N5050

2N5051

2N5052

MIC

E

TOR

UC

ND

O

VALUE

125

150

200

125

150

200

7

2

UNIT

V

Open base

V

Open collector

V

A

W

℃

Total Power Dissipation

Junction temperature

Storage temperature

T

C

=25℃

40

150

-65~200

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

7.0

UNIT

℃/W

2N5052 Related Products

	2N5052	2N5051	2N5050
Description	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66
Maximum collector current	2 A	2 A	2 A
Maximum Collector-Emitter Voltage	150 V	150 V	150 V
Number of terminals	2	2	2
state	Active	Active	Active
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
structure	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	25	25	25
jedec_95_code	TO-66	TO-66	TO-66
jesd_30_code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Maximum operating temperature	175 Cel	175 Cel	175 Cel
Packaging Materials	METAL	METAL	METAL
packaging shape	ROUND	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
larity_channel_type	NPN	NPN	NPN
wer_dissipation_max__abs_	40 W	40 W	40 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors
surface mount	NO	NO	NO
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Rated crossover frequency	10 MHz	10 MHz	10 MHz
vcesat_max	1 V	1 V	1 V

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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