2N5051 datasheet, PDF - EEWORLD Datasheet

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2N5051: Description2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66; Categorysemiconductor Discrete semiconductor; File Size122KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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2N5051 Overview

2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66

2N5051 Parametric

Parameter Name	Attribute value
Maximum collector current	2 A
Maximum Collector-Emitter Voltage	150 V
Number of terminals	2
state	Active
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	25
jedec_95_code	TO-66
jesd_30_code	O-MBFM-P2
Number of components	1
Maximum operating temperature	175 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	FLANGE MOUNT
larity_channel_type	NPN
wer_dissipation_max__abs_	40 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	NOT SPECIFIED
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Rated crossover frequency	10 MHz
vcesat_max	1 V

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Product Specification

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-66 package

・High

breakdown voltage

・Excellent

safe operating area

APPLICATIONS

・Designed

for driver circuits,switching

and amplifier applications

PINNING

Base

Emitter

Collector

DESCRIPTION

2N5050 2N5051 2N5052

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=

℃)

SYMBOL

CBO

电半

固

PARAMETER

导½

CONDITIONS

2N5050

2N5051

Open emitter

Collector-base voltage

CEO

Collector-emitter voltage

EBO

stg

Emitter-base voltage

Collector current

INC

2N5050

2N5051

2N5052

MIC

TOR

VALUE

125

150

200

125

150

200

UNIT

Open base

Open collector

℃

Total Power Dissipation

Junction temperature

Storage temperature

=25℃

150

-65~200

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

7.0

UNIT

℃/W

2N5051 Related Products

	2N5051	2N5052	2N5050
Description	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66	2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66
Maximum collector current	2 A	2 A	2 A
Maximum Collector-Emitter Voltage	150 V	150 V	150 V
Number of terminals	2	2	2
state	Active	Active	Active
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
structure	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	25	25	25
jedec_95_code	TO-66	TO-66	TO-66
jesd_30_code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Maximum operating temperature	175 Cel	175 Cel	175 Cel
Packaging Materials	METAL	METAL	METAL
packaging shape	ROUND	ROUND	ROUND
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
larity_channel_type	NPN	NPN	NPN
wer_dissipation_max__abs_	40 W	40 W	40 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors
surface mount	NO	NO	NO
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Rated crossover frequency	10 MHz	10 MHz	10 MHz
vcesat_max	1 V	1 V	1 V

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