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3DD207

Description
Silicon NPN Power Transistors
File Size111KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD207 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD207
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
APPLICATIONS
・For
audio amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
固电
Collector-base voltage
导½
PARAMETER
CONDITIONS
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
T
C
=75℃
OR
CT
NDU
O
VALUE
60
60
6
5
50
150
-55~150
UNIT
V
V
V
A
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