BD681 datasheet, PDF - EEWORLD Datasheet

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BD681: Description4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA; Categorysemiconductor Discrete semiconductor; File Size113KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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BD681 Overview

4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA

BD681 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	100 V
Processing package description	PLASTIC, CASE 77-09, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Darlington WITH BUILT-IN diode AND resistor
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Transistor type	universal power supply
Minimum DC amplification factor	750

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD675A/677A/679A/681

DESCRIPTION

・With

TO-126 package

・Complement

to type BD676A/678A/680A/682

・DARLINGTON

APPLICATIONS

・For

medium power linear and

switching applications

PINNING

1

2

3

Emitter

Collector;connected to

mounting base

Base

DESCRIPTION

・

Absolute maximum ratings (Ta=25

℃)

SYMBOL

PARAMETER

固电

IN

导½

半

BD675A

BD677A

BD679A

V

CBO

Collector-base voltage

ANG

CH

MIC

E SE

Open emitter

Open base

CONDITIONS

OR

UCT

ND

O

VALUE

45

60

80

100

45

60

UNIT

V

BD681

BD675A

BD677A

V

CEO

Collector-emitter voltage

BD679A

BD681

V

80

100

V

EBO

I

C

I

CM

I

B

P

C

T

j

T

stg

Emitter -base voltage

Collector current

Collector current-Peak

Base current

Collector power dissipation

Junction temperature

Storage temperature

Open collector

5

4

6

0.1

V

A

W

℃

T

C

=25℃

40

150

-65~150

BD681 Related Products

	BD681	BD675A	BD677A	BD679A
Description	4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
Number of terminals	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN
Maximum collector current	4 A	4 A	4 A	4 A
Maximum Collector-Emitter Voltage	100 V	60 V	60 V	80 V
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	tin lead	tin lead	tin lead	tin lead
Terminal location	single	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Darlington WITH BUILT-IN diode AND resistor	darlington	darlington	Darlington WITH BUILT-IN diode AND resistor
Number of components	1	1	1	1
transistor applications	amplifier	switch	switch	amplifier
Transistor component materials	silicon	silicon	silicon	silicon
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply
Minimum DC amplification factor	750	750	750	750

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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