Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5614 2N5616 2N5618 2N5620
DESCRIPTION
・With
TO-3 package
・Excellent
safe operating area
・Low
collector saturation voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
导½
半
PARAMETER
2N5614
CONDITIONS
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter-base voltage
Collector current
ES
NG
2N5616/5618
2N5620
2N5614
2N5616/5618
2N5620
MIC
E
Open emitter
Open base
OR
UCT
ND
O
VALUE
80
100
120
60
80
100
UNIT
V
Collector-emitter voltage
V
V
EBO
I
C
P
D
T
j
T
stg
Open collector
5
5
V
A
W
℃
℃
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
50
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5614
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5616/5618
2N5620
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5614 2N5616 2N5618 2N5620
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
=50mA ;I
B
=0
80
100
V
I
C
=1A; I
B
=0.1A
I
C
=2.5A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
0.5
1.5
0.1
1.0
0.1
V
V
mA
mA
mA
h
FE
固电
DC current gain
导½
半
2N5614/5618
I
C
=2.5A ; V
CE
=5V
2N5616/5620
f
T
Transition frequency
CH
IN
ANG
2N5614/5618
MIC
E SE
I
C
=0.5A ; V
CE
=10V
OR
UCT
ND
O
70
200
90
30
70
MHz
60
2N5616/5620
2
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