TIP146 datasheet, PDF - EEWORLD Datasheet

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TIP146: Description10 A, 80 V, PNP, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size77KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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TIP146 Overview

10 A, 80 V, PNP, Si, POWER TRANSISTOR

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Darlington Power Transistor

TIP145

DESCRIPTION

·High

DC Current Gain-

: h

= 1000(Min)@ I

= -

·Collector-Emitter

Sustaining Voltage-

: V

CEO(SUS)

= -60V(Min)

·Complement

to Type TIP140

APPLICATIONS

·Designed

for general purpose amplifier and low

frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(T

=25℃)

SYMBOL

CBO

CEO

EBO

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

Collector Power Dissipation

=25℃

Junction Temperature

Storage Temperature Range

VALUE

-60

-5

-10

-15

-0.5

125

150

-65~150

UNIT

℃

stg

THERMAL CHARACTERISTICS

SYMBOL

th j-c

th j-a

PARAMETER

Thermal Resistance, Junction to Case

Thermal Resistance,Junction to Ambient

MAX

1.0

35.7

UNIT

℃/W

isc Website：www.iscsemi.cn

TIP146 Related Products

	TIP146	TIP145
Description	10 A, 80 V, PNP, Si, POWER TRANSISTOR	10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218

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