INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
TIP145
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= -
5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -60V(Min)
·Complement
to Type TIP140
APPLICATIONS
·Designed
for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-60
-60
-5
-10
-15
-0.5
125
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
35.7
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
V
BE
(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff current
Collector Cutoff current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= -30mA, I
B
= 0
I
C
= -5A ,I
B
= -10mA
I
C
= -10A ,I
B
= -40mA
I
C
= -10A ,I
B
= -40mA
I
C
= -10A ; V
CE
= -4V
V
CB
= -60V, I
E
= 0
V
CE
= -30V, I
B
= 0
V
EB
= -5V; I
C
= 0
I
C
= -5A ; V
CE
= -4V
I
C
= -10A ; V
CE
= -4V
1000
500
MIN
-60
TYP.
TIP145
MAX
UNIT
V
-2.0
-3.0
-3.5
-3.0
-1
-2
-2
V
V
V
V
mA
mA
mA
Switching Times
t
d
t
r
t
stg
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= -30 V, I
C
= - 5.0 A,
I
B
= -20 mA;
Duty Cycle≤20%
I
B1
= I
B2
,
R
C
& R
B
Varied,
T
J
= 25℃
B
0.15
0.55
2.5
2.5
μs
μs
μs
μs
isc Website：www.iscsemi.cn
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