AON4407L datasheet, PDF - EEWORLD Datasheet

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AON4407L: DescriptionP-Channel Enhancement Mode Field Effect Transistor; File Size153KB，5 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about

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AON4407L Overview

P-Channel Enhancement Mode Field Effect Transistor

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AON4407L

P-Channel Enhancement Mode Field Effect Transistor

General Description

The AON4407L uses advanced trench technology to

provide excellent R

DS(ON)

, low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable

for use as a load switch.

-RoHS Compliant

-Halogen Free

Features

(V) = -12V

= -9 A

= -4.5V)

DS(ON)

< 20mΩ (V

= -4.5V)

DS(ON)

< 25mΩ (V

= -2.5V)

DS(ON)

< 31mΩ (V

= -1.8V)

ESD Protected!

DFN 3x2

Top View

Pin 1

Bottom View

Absolute Maximum Ratings T

=25°C unless otherwise noted

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Power Dissipation

Maximum

-12

±8

-9

-7

-60

2.5

1.6

-55 to 150

Units

=25°C

=70°C

=25°C

=70°C

, T

STG

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Symbol

≤

10s

Steady State

θJA

θJL

Typ

Max

Units

°C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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