RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.03 A |
| Collector-based maximum capacity | 0.8 pF |
| Collector-emitter maximum voltage | 3 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 70 |
| highest frequency band | S BAND |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 11000 MHz |
| Base Number Matches | 1 |
| NE68719-T2 | NE68718-T2 | NE68718-T1 | NE68730-T2 | NE68733-T2 | NE68733-T1 | NE68739R-T1 | NE68739R-T2 | NE68739-T2 | NE68739-T1 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| Collector-based maximum capacity | 0.8 pF | 0.6 pF | 0.6 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF |
| Collector-emitter maximum voltage | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 70 | 70 | 70 | 70 | 70 | 70 | 70 | 70 | 70 | 70 |
| highest frequency band | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 4 | 4 | 3 | 3 | 3 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 11000 MHz | 13000 MHz | 13000 MHz | 11000 MHz | 12000 MHz | 12000 MHz | 10000 MHz | 10000 MHz | 10000 MHz | 10000 MHz |
| Maker | - | - | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |