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NE68719-T2

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size513KB,11 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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NE68719-T2 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN

NE68719-T2 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage3 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
highest frequency bandS BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz
Base Number Matches1

NE68719-T2 Related Products

NE68719-T2 NE68718-T2 NE68718-T1 NE68730-T2 NE68733-T2 NE68733-T1 NE68739R-T1 NE68739R-T2 NE68739-T2 NE68739-T1
Description RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
Collector-based maximum capacity 0.8 pF 0.6 pF 0.6 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF
Collector-emitter maximum voltage 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 70 70 70 70 70 70 70 70 70
highest frequency band S BAND S BAND S BAND S BAND S BAND S BAND S BAND S BAND S BAND S BAND
JESD-30 code R-PDSO-G3 R-PDSO-G4 R-PDSO-G4 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 4 4 3 3 3 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 11000 MHz 13000 MHz 13000 MHz 11000 MHz 12000 MHz 12000 MHz 10000 MHz 10000 MHz 10000 MHz 10000 MHz
Maker - - California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs

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