NE68718-T2 datasheet, PDF - EEWORLD Datasheet

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NE68718-T2: DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size513KB，11 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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NE68718-T2 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN

NE68718-T2 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.03 A
Collector-based maximum capacity	0.6 pF
Collector-emitter maximum voltage	3 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
highest frequency band	S BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	13000 MHz
Base Number Matches	1

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package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
Collector-based maximum capacity	0.6 pF	0.8 pF	0.6 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF
Collector-emitter maximum voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	70	70	70	70	70	70	70	70	70
highest frequency band	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G3	R-PDSO-G4	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	4	3	4	3	3	3	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	13000 MHz	11000 MHz	13000 MHz	11000 MHz	12000 MHz	12000 MHz	10000 MHz	10000 MHz	10000 MHz	10000 MHz
Maker	-	-	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs

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