J/SST174 SERIES
SINGLE P-CHANNEL
JFET SWITCH
FEATURES
Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
V
GDS
= 30V
V
GSS
= 30V
I
G
= -50mA
3
1
r
DS(on)
≤ 85Ω
I
D(off)
= 10pA
J SERIES
-55 to 150°C
-55 to 135°C
350mW
SST SERIES
SOT-23
TOP VIEW
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
GSS
I
G
I
D(off)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
MIN
30
-0.7
0.01
0.01
-0.01
-1
1
nA
TYP
MAX
UNITS
V
CONDITIONS
I
G
= 1µA, V
DS
= 0V
I
G
= -1mA, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS(off)
I
DSS
r
DS(on)
CHARACTERISTIC
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain to Source
On Resistance
J/SST174
MIN
5
-20
MAX
10
-195
85
J/SST175
MIN
3
-7
MAX
6
-90
125
J/SST176
MIN
1
-2
MAX
4
-55
250
J/SST177
MIN
0.8
-1.5
MAX
2.25
-30
300
UNITS
V
mA
Ω
CONDITIONS
V
DS
= -15V, I
D
= -10nA
V
DS
= -15V, V
GS
= 0V
V
GS
= 0V, V
DS
= -0.1V
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201111 05/30/13 Rev#A5 ECN#J SST174
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
CHARACTERISTIC
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
TYP
10
15
10
20
ns
UNITS
CONDITIONS
V
GS(L)
= 0V
V
GS(H)
= 10V
See Switching
Circuit
SWITCHING CIRCUIT
V
GS(H)
V
GS(L)
1.2k
R
L
0.1µF
R
G
7.5k
SWITCHING CIRCUIT PARAMETERS
J/SST174
V
DD
V
GG
R
L
R
G
I
D(on)
-10V
20V
560Ω
100Ω
-15mA
J/SST175
-6V
12V
750Ω
220Ω
-7mA
J/SST176
-6V
8V
1800Ω
390Ω
-3mA
J/SST177
-6V
5V
5600Ω
390Ω
-1mA
51
Scope
51
1.2k
51
SOT-23
0.89
1.03
1
1.78
2.05
0.37
0.51
3
2.80
3.04
2
1.20
1.40
2.10
2.64
0.085
0.180
0.89
1.12
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulsed test: P
W
≤ 300µS Duty Cycle: 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
3. Derate 2.8mW/°C above 25 °C.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201111 05/30/13 Rev#A5 ECN#J SST174
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