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RTAX4000S-1LG1272EV

Description
Field Programmable Gate Array, 40320 CLBs, 4000000 Gates, CMOS, CBGA1272, LGA-1272
CategoryProgrammable logic devices    Programmable logic   
File Size14MB,278 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

RTAX4000S-1LG1272EV Overview

Field Programmable Gate Array, 40320 CLBs, 4000000 Gates, CMOS, CBGA1272, LGA-1272

RTAX4000S-1LG1272EV Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionLGA-1272
Reach Compliance Codecompliant
Other features500000 ASIC GATES ALSO AVAILABLE
Combined latency of CLB-Max0.95 ns
JESD-30 codeS-CBGA-B1272
length37.5 mm
Configurable number of logic blocks40320
Equivalent number of gates4000000
Number of entries840
Output times840
Number of terminals1272
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize40320 CLBS, 4000000 GATES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeLGA
Encapsulate equivalent codeLGA(UNSPEC)
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.5/3.3 V
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Certification statusNot Qualified
Filter levelMIL-PRF-38535
Maximum supply voltage1.575 V
Minimum supply voltage1.425 V
Nominal supply voltage1.5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBUTT
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width37.5 mm
Base Number Matches1
Revision 15
RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs
Radiation Performance
• SEU-Hardened Registers Eliminate the Need for Triple-Module
Redundancy (TMR)
– Immune to Single-Event Upsets (SEU) to LET
TH
> 37 MeV-
cm
2
/mg
– SEU Rate < 10
-10
Errors/Bit-Day (worst case GEO)
• SRAM Upset Rate of <10
-10
Errors/Bit-Day with Use of Error
Detection and Correction (EDAC) IP (included) with Integrated
SRAM Scrubber
– Single-Bit Correction, Double-Bit Detection
– Variable-Rate Background Refreshing
• Total Ionizing Dose Up to 300 krad (Si, Functional)
• Single-Event Latch-Up Immunity (SEL) to LET
TH
> 117 MeV-
cm
2
/mg
• TM1019 Test Data Available
Specifications
• Up to 4 Million Equivalent System Gates or 500 k Equivalent
ASIC Gates
• Up to 20,160 SEU-Hardened Flip-Flops
• Up to 840 I/Os
with
SEU-Protected Input, Output, and Enable
Registers
• Up to 540 kbits Embedded SRAM
• Manufactured on 0.15 µm CMOS Antifuse Process Technology,
7 Layers of Metal
• Electrostatic Discharge (ESD) is 2,000 V (HBM MIL-STD-883,
TM3015)
Embedded Multiply/Accumulate Blocks
(RTAX-DSP Only)
Up to 120 Multiply/Accumulate Blocks
Fully SEU- and SET-Hardened
125 MHz Performance throughout Military Temperature Range
Flexible, Cascadable Accumulate Function
Processing Flows
• B-Flow – MIL-STD-883B
• E-Flow – Extended Flow
• EV-Flow – Class V Equivalent Flow Processing Consistent with
MIL-PRF 38535 (RTAX-DSP only)
• V-Flow – QML Class V per MIL-PRF-38535 (RTAX-S/SL only)
Features
• Single-Chip, Nonvolatile Solution
• 1.5 V Core Voltage for Low Power
• Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3 V PCI
– JTAG Boundary Scan Testing (as per IEEE 1149.1)
– Differential I/O Standards: LVPECL and LVDS
– Voltage-Referenced I/O Standards: GTL+, HSTL Class 1,
SSTL2 Class 1 and 2, SSTL3 Class 1 and 2
– Hot-Swap with Cold-Sparing Support (Except PCI)
• Embedded Memory with Variable Aspect Ratio:
– Independent, Width-Configurable Read and Write Ports
– Programmable Embedded FIFO Control Logic
– ROM Emulation Capability
• Deterministic, User-Controllable Timing
• Unique In-System Diagnostic and Debug Capability
Prototyping Options
• Commercial Axcelerator
®
Devices for Functional Verification
(RTAX™-S/SL only)
• RTAX-S/SL PROTO and RTAX-DSP PROTO Devices with
Same Functional and Timing Characteristics as Flight Unit in a
Non-Hermetic Package
• Low-Priced Reprogrammable ProASIC
®
3 Option for Functional
Verification (RTAX-S/SL only)
• Offers Up To 80% Saving of Static Current Compared to
Standard RTAX-S Device at Worst-Case Conditions
RTAX-SL Low Power Option
Leading-Edge Performance
High-Performance Embedded FIFOs
350+ MHz System Performance
500+ MHz Internal Performance
700 Mb/s LVDS Capable I/Os
Table 1 • RTAX Family Product Profile
Device
Capacity
Equivalent System Gates
ASIC Gates
Modules
Register (R-cells)
Combinatorial (C-cells)
Embedded RAM/FIFO (w/o EDAC)
Core RAM Blocks
Core RAM Bits (K = 1,024)
Embedded Multiply/Accumulate
Blocks
Clocks (segmentable)
Hardwired
Routed
I/Os
I/O Banks
User I/Os (maximum)
I/O Registers
Package
CG/LG*
CQ
Note:
RTAX250S/SL RTAX1000S/SL RTAX2000S/SL RTAX4000S/SL RTAX2000D/DL RTAX4000D/DL
250,000
30,000
1,408
2,816
12
54 k
1,000,000
125,000
6,048
12,096
36
162 k
2,000,000
250,000
10,752
21,504
64
288 k
4,000,000
500,000
20,160
40,320
120
540 k
2,000,000
250,000
9,856
19,712
64
288 k
64
4,000,000
500,000
18,480
36,960
120
540 k
120
4
4
8
198
744
624
208, 352
4
4
8
418
1,548
624
352
4
4
8
684
2,052
624, 1152
256, 352
4
4
8
840
2,520
1272
352
4
4
8
684
2,052
1272
352
4
4
8
840
2,520
1272
352
*The body size of the CG1272 and LG1272 packages used on the RTAX-DSP devices is slightly larger than the body size of the
CG/LG1272 used on RTAX4000S/SL devices.
i
May 2012
© 2011 Microsemi Corporation
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