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ST303S04MDL3LPBF

Description
Silicon Controlled Rectifier, 471A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE
CategoryAnalog mixed-signal IC    Trigger device   
File Size134KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
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ST303S04MDL3LPBF Overview

Silicon Controlled Rectifier, 471A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE

ST303S04MDL3LPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionPOST/STUD MOUNT, O-MUPM-X2
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Nominal circuit commutation break time15 µs
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-209AE
JESD-30 codeO-MUPM-X2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current471 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature40
Trigger device typeSCR
Base Number Matches1
Bulletin I25173 rev. B 03/94
ST303S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
300A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
q
ST303S
300
65
471
7950
8320
316
288
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AE (TO-118)
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
www.irf.com
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