MPSA56J18Z datasheet, PDF - EEWORLD Datasheet

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MPSA56J18Z: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，15 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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MPSA56J18Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

MPSA56J18Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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MPSA56/MMBTA56/PZTA56 PNP General Purpose Ampliﬁer

February 2006

MPSA56/MMBTA56/PZTA56

PNP General Purpose Ampliﬁer

Description

This device is designed for general purpose ampliﬁer

applications at collector currents to 300mA. Sourced

from Process 73

Absolute Maximum Ratings*

= 25

C unless otherwise speciﬁed.

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating and Storage Junction Temperature Range

Symbol

CES

CBO

EBO

, T

STG

Value

-80

-4.0

-500

-55 to +150

Unit

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

= 25°C unless otherwise noted.

Max

Characteristic

Total Device Dissipation,

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Symbol

MPSA56

625

5.0

83.3

200

*MMBTA56

350

2.8

357

**PZTA56

1,000

8.0

125

Units

mW/°C

°C/W

*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."

**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm

Packages

MPSA56

MMBTA56

PZTA56

TO-92

SOT-23

Mark: 2G

SOT-223

www.fairchildsemi.com

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

MPSA56J18Z Related Products

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Description	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Transistor	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Transistor	Transistor
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	,	,	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	,	,
Reach Compliance Code	unknown	compliant	unknown	unknown	compliant	compliant	compliant	compliant	unknown	unknown
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Configuration	SINGLE	SINGLE	Single	Single	SINGLE	SINGLE	SINGLE	SINGLE	Single	Single
Minimum DC current gain (hFE)	100	100	50	50	100	100	100	100	50	50
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.625 W	0.625 W	0.625 W	0.625 W	0.225 W	0.625 W	0.625 W	0.625 W	0.625 W	0.625 W
surface mount	NO	NO	NO	NO	YES	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Is it Rohs certified?	incompatible	conform to	-	incompatible	conform to	conform to	conform to	conform to	incompatible	incompatible
Parts packaging code	TO-92	TO-92	-	-	SOT-23	TO-92	TO-92	TO-92	-	-
Contacts	3	3	-	-	3	3	3	3	-	-
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	-	-
Collector-emitter maximum voltage	80 V	80 V	-	-	80 V	80 V	80 V	80 V	-	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	-	-	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-	-
JESD-609 code	e0	e3	-	e0	e3	e3	e3	e3	e0	e0
Number of components	1	1	-	-	1	1	1	1	-	-
Number of terminals	3	3	-	-	3	3	3	3	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	ROUND	ROUND	-	-	RECTANGULAR	ROUND	ROUND	ROUND	-	-
Package form	CYLINDRICAL	CYLINDRICAL	-	-	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	-
Certification status	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-
Terminal location	BOTTOM	BOTTOM	-	-	DUAL	BOTTOM	BOTTOM	BOTTOM	-	-
transistor applications	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-
Transistor component materials	SILICON	SILICON	-	-	SILICON	SILICON	SILICON	SILICON	-	-
Maker	-	-	-	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild

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