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MPSA56D26Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,15 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MPSA56D26Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

MPSA56D26Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier
February 2006
MPSA56/MMBTA56/PZTA56
PNP General Purpose Amplifier
Description
This device is designed for general purpose amplifier
applications at collector currents to 300mA. Sourced
from Process 73
Absolute Maximum Ratings*
T
A
= 25
°
C unless otherwise specified.
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Operating and Storage Junction Temperature Range
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Value
-80
-80
-4.0
-500
-55 to +150
Unit
V
V
V
mA
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
T
A
= 25°C unless otherwise noted.
Max
Characteristic
Total Device Dissipation,
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
P
D
R
θ
JC
R
θ
JA
MPSA56
625
5.0
83.3
200
*MMBTA56
350
2.8
357
**PZTA56
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."
**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm
2
.
Packages
MPSA56
C
MMBTA56
C
PZTA56
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2G
B
SOT-223
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

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Description Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor Transistor
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 , CYLINDRICAL, O-PBCY-T3 , SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 , ,
Reach Compliance Code compliant compliant unknown unknown unknown compliant compliant compliant unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Configuration SINGLE SINGLE Single SINGLE Single SINGLE SINGLE SINGLE Single Single
Minimum DC current gain (hFE) 100 100 50 100 50 100 100 100 50 50
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.225 W 0.625 W 0.625 W 0.625 W 0.625 W
surface mount NO NO NO NO NO YES NO NO NO NO
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz
Is it Rohs certified? conform to conform to - incompatible incompatible conform to conform to conform to incompatible incompatible
Maker Fairchild - - - Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-92 TO-92 - TO-92 - SOT-23 TO-92 TO-92 - -
Contacts 3 3 - 3 - 3 3 3 - -
ECCN code EAR99 EAR99 - EAR99 - EAR99 EAR99 EAR99 - -
Collector-emitter maximum voltage 80 V 80 V - 80 V - 80 V 80 V 80 V - -
JESD-30 code O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 - R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 - -
JESD-609 code e3 e3 - e0 e0 e3 e3 e3 e0 e0
Number of components 1 1 - 1 - 1 1 1 - -
Number of terminals 3 3 - 3 - 3 3 3 - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape ROUND ROUND - ROUND - RECTANGULAR ROUND ROUND - -
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL - SMALL OUTLINE CYLINDRICAL CYLINDRICAL - -
Certification status Not Qualified Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified - -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE - GULL WING THROUGH-HOLE THROUGH-HOLE - -
Terminal location BOTTOM BOTTOM - BOTTOM - DUAL BOTTOM BOTTOM - -
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER - -
Transistor component materials SILICON SILICON - SILICON - SILICON SILICON SILICON - -

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