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MPSA56-D28Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,15 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MPSA56-D28Z Overview

Transistor

MPSA56-D28Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)50 MHz
MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier
February 2006
MPSA56/MMBTA56/PZTA56
PNP General Purpose Amplifier
Description
This device is designed for general purpose amplifier
applications at collector currents to 300mA. Sourced
from Process 73
Absolute Maximum Ratings*
T
A
= 25
°
C unless otherwise specified.
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Operating and Storage Junction Temperature Range
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Value
-80
-80
-4.0
-500
-55 to +150
Unit
V
V
V
mA
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
T
A
= 25°C unless otherwise noted.
Max
Characteristic
Total Device Dissipation,
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
P
D
R
θ
JC
R
θ
JA
MPSA56
625
5.0
83.3
200
*MMBTA56
350
2.8
357
**PZTA56
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."
**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm
2
.
Packages
MPSA56
C
MMBTA56
C
PZTA56
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2G
B
SOT-223
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

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Description Transistor Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Transistor
package instruction , CYLINDRICAL, O-PBCY-T3 , CYLINDRICAL, O-PBCY-T3 , SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 ,
Reach Compliance Code unknown compliant unknown unknown unknown compliant compliant compliant compliant unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Configuration Single SINGLE Single SINGLE Single SINGLE SINGLE SINGLE SINGLE Single
Minimum DC current gain (hFE) 50 100 50 100 50 100 100 100 100 50
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.225 W 0.625 W 0.625 W 0.625 W 0.625 W
surface mount NO NO NO NO NO YES NO NO NO NO
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz
Is it Rohs certified? incompatible conform to - incompatible incompatible conform to conform to conform to conform to incompatible
Maker Fairchild - - - Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
JESD-609 code e0 e3 - e0 e0 e3 e3 e3 e3 e0
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Parts packaging code - TO-92 - TO-92 - SOT-23 TO-92 TO-92 TO-92 -
Contacts - 3 - 3 - 3 3 3 3 -
ECCN code - EAR99 - EAR99 - EAR99 EAR99 EAR99 EAR99 -
Collector-emitter maximum voltage - 80 V - 80 V - 80 V 80 V 80 V 80 V -
JESD-30 code - O-PBCY-T3 - O-PBCY-T3 - R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
Number of components - 1 - 1 - 1 1 1 1 -
Number of terminals - 3 - 3 - 3 3 3 3 -
Package body material - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - ROUND - ROUND - RECTANGULAR ROUND ROUND ROUND -
Package form - CYLINDRICAL - CYLINDRICAL - SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Certification status - Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal form - THROUGH-HOLE - THROUGH-HOLE - GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location - BOTTOM - BOTTOM - DUAL BOTTOM BOTTOM BOTTOM -
transistor applications - AMPLIFIER - AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials - SILICON - SILICON - SILICON SILICON SILICON SILICON -

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