SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1279
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal deflection output
applications
·Switching regulator applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1400
600
5
10
5
50
150
-65~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1279
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
t
f
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0
I
C
=8A; I
B
=2A
I
C
=8A; I
B
=2A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
600
V
Collector-emitter saturation voltage
5.0
V
Base-emitter saturation voltage
1.6
V
Collector cut-off current
10
µA
Emitter cut-off current
1.0
mA
DC current gain
8
22
Transition frequency
3
MHz
Collector output capacitance
165
pF
Fall time
I
CP
=7A ;I
B1(
end
)
=1.5A
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1279
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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