SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1497
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
C(
surge
)
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
7
6
7
16
50
150
-45~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Fall time
CONDITIONS
I
E
=10mA; I
C
=0
I
C
=10mA; R
BE
=;
I
C
=5A; I
B
=1A
I
C
=5A; I
B
=1A
V
CE
=1500V; V
BE
=1.5V
V
EB
=7V; I
C
=0
I
C
=0.3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
CP
=4A;I
B1
=1.3A; L
B
=0
10
5
MIN
7
600
2SD1497
SYMBOL
V
(BR)EBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CEX
I
EBO
h
FE-1
h
FE-2
t
f
TYP.
MAX
UNIT
V
V
5.0
1.5
1.0
1.0
30
V
V
mA
mA
2.0
µs
2
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