SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1652
DESCRIPTION
·With TO-3PML package
·Built-in damper diode
·High breakdown voltage
·High speed switching
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
6
16
60
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1652
SYMBOL
TYP.
MAX
UNIT
V
(BR)EBO
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
Emitter-base breakdown voltage
I
E
=200mA , I
C
=0
I
C
=0.1A; R
BE
=<
I
C
=5mA; I
E
=0
I
C
=5A ;I
B
=1A
I
C
=5A ;I
B
=1A
V
CB
=800V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
I
F
=6A
I
C
=5A;I
B1
=1A;I
B2
=-2A
V
CC
=200V;R
L
=40B
7
V
Collector-emitter breakdown voltage
800
V
Collector-base breakdown voltage
1500
V
Collector-emitter saturation voltage
5.0
V
Base-emitter saturation voltage
1.5
V
Collector cut-off current
10
µA
Emitter cut-off current
40
130
mA
DC current gain
8
Transition frequency
3
MHz
V
F
t
f
Diode forward voltage
2.0
V
Fall time
0.4
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1652
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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