SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3153
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (V
CBO
900V)
·Fast switching speed
·Wide ASO Safe Operating Area
APPLICATIONS
·800V/6A switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
6
20
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=5mA ;R
BE
=<
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.4A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.4A ; V
CE
=10V
10
8
MIN
800
900
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
2SC3153
TYP.
MAX
UNIT
V
V
V
2.0
1.5
10
10
40
V
V
µA
µA
120
15
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A;I
B1
=0.8A;I
B2
=-1.6A
R
L
=100E,V
CC
=400V
1.0
3.0
0.7
µs
µs
µs
h
FE-1
classifications
K
10-20
L
15-30
M
20-40
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3153
Fig.2 outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3153
4
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