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2SC3156

Description
Silicon NPN Power Transistors
File Size117KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet View All

2SC3156 Overview

Silicon NPN Power Transistors

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
: V
CBO
=900V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2SC3156
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
PW3300µs, Duty Cycle310%
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
7
6
20
3
120
150
-55~150
UNIT
V
V
V
A
A
A
W
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