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2SC3507

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size141KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric View All

2SC3507 Overview

POWER TRANSISTOR

2SC3507 Parametric

Parameter NameAttribute value
stateActive
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3507
DESCRIPTION
·With TO-3PFa package
·High-speed switching
·High collector-base voltage V
CBO
·Satisfactory linearity of forward
current transfer ratio h
FE
APPLICATIONS
·For high-speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
800
7
5
10
3
80
W
UNIT
V
V
V
A
A
A
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