SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3577
DESCRIPTION
·With TO-3PFa package
·High breakdown voltage
·High speed
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
850
650
7
5
10
3
80
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3577
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.5A;L=50mH
I
C
=3A ;I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=800V; V
BE
=0
V
EB
=7V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
10
6
6
MHz
MIN
650
1.5
1.5
50
50
TYP.
MAX
UNIT
V
V
V
µA
µA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=3A; V
CC
=250V
I
B1
=0.6A;I
B2
=-1.2A
1.0
2.5
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3577
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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