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2SC3835

Description
7 A, 120 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size167KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric View All

2SC3835 Overview

7 A, 120 V, NPN, Si, POWER TRANSISTOR

2SC3835 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current7 A
Maximum Collector-Emitter Voltage120 V
Processing package descriptionMT-100, TO-3P, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor70
Rated crossover frequency30 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3835
DESCRIPTION
·With TO-3PN package
·Switching transistor
APPLICATIONS
·For humidifier ,DC-DC converter
and general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
120
8
7
14
3
70
150
-55~150
UNIT
V
V
V
A
A
A
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