SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display
·High speed switching regulator output
applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC3886
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1400
600
5
8
15
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3886
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=5mA ;I
B
=0
I
C
=6A; I
B
=1.5A
I
C
=6A; I
B
=1.5A
V
CB
=1400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
I
E
=0.1A ; V
CE
=10V
8
15
150
3
8
pF
MHz
MIN
600
5
5
1.0
10
TYP.
MAX
UNIT
V
V
V
mA
µA
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
Switching times inductive load
t
s
t
f
Storage time
Fall time
I
CP
=6A;I
B1
=1.2A
f
H
=64kHz
L
Y
=120µH;C
Y
=7500pF
2.5
0.1
4.0
0.5
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3886
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3886
4
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