SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1292
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1832
·Excellent DC current gain characteristics
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power amplifier
applications,power drivers and DC-DC
converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-5
-5
-10
30
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-1mA , I
B
=0
I
C
=-50µA , I
E
=0
I
E
=-50µA , I
C
=0
I
C
=-3A ;I
B
=-0.3A
I
C
=-3A ;I
B
=-0.3A
V
CB
=-60V ;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V ,f=1MHz
100
MIN
-60
-60
-5
2SB1292
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
TYP.
MAX
UNIT
V
V
V
-1.5
-1.5
-10
-10
320
12
150
V
V
µA
µA
MHz
pF
h
FE
Classifications
E
100-200
F
160-320
2
SavantIC Semiconductor
Product Specification
Silicon Power Transistors
PACKAGE OUTLINE
2SB1292
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
京公网安备 11010802033920号
EEWORLD
