SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB940,2SB940A
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SD1264/1264A
·High collector to emitter voltage V
CEO
·Large collector power dissipation P
C
APPLICATIONS
·For power amplification
·For TV vertical deflection output
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SB940
V
CBO
Collector-base voltage
2SB940A
2SB940
V
CEO
Collector-emitter voltage
2SB940A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
Open collector
Open base
-180
-6
-2
-3
2
W
V
A
A
Open emitter
-200
-150
V
CONDITIONS
VALUE
-200
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB940
I
C
=-5mA ,I
B
=0
2SB940A
I
C
=-50µA ,I
E
=0
I
C
=-500µA ,I
C
=0
I
C
=-0.5A, I
B
=-50mA
I
C
=-0.4A ; V
CE
=-10V
V
EB
=-4V; I
C
=0
V
CB
=-200V; I
E
=0
I
C
=-0.15A ; V
CE
=-10V
I
C
=-0.4A ; V
CE
=-10V
I
C
=-0.5A; V
CE
=-10V,f=10MHz
CONDITIONS
2SB940,2SB940A
SYMBOL
MIN
-150
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-180
-200
-6
-1.0
-1.0
-50
-50
60
50
30
MHz
240
V
V
V
V
µA
µA
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
EBO
I
CBO
h
FE-1
h
FE-2
f
T
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
Transition frequency
h
FE-1
Classifications
Q
60-140
P
100-240
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB940,2SB940A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB940,2SB940A
4
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