SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4427
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability
.
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
PW 300µs, duty cycle 10%
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1100
800
7
4.5
15
2
50
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4427
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA; I
E
=0
I
C
=5mA; R
BE
==
I
E
=1mA; I
C
=0
I
C
=2A;I
B
=0.4A
I
C
=2A;I
B
=0.4A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.3A ; V
CE
=5V
I
C
=1.5A ; V
CE
=5V
I
C
=0.3A ; V
CE
=10V
V
CB
=10V;f=1MHz
10
8
15
90
MHz
pF
MIN
1100
800
7
2.0
1.5
10
10
40
TYP.
MAX
UNIT
V
V
V
V
V
µA
µA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=3A;R
L
=133C
I
B1
=0.6A; I
B2
=-1.2A
V
CC
=400V
0.5
3.0
0.3
µs
µs
µs
h
FE-1
classifications
K
10-20
L
15-30
M
20-40
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4427
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4427
4
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