SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1264 2SD1264A
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB940/940A
·High collector to emitter voltage V
CEO
·Large collector power dissipation P
C
APPLICATIONS
·For power amplification
·For TV vertical deflection output applications
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SD1264
V
CEO
Collector-emitter voltage
2SD1264A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
Open collector
Open base
180
6
2
3
2
W
V
A
A
CONDITIONS
Open emitter
VALUE
200
150
V
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD1264
V
CEO
Collector-emitter voltage
2SD1264A
V
CBO
V
EBO
V
CEsat
V
BE
I
EBO
I
CBO
h
FE-1
h
FE-2
f
T
Collector-base voltage
Emitter-base voltage
Collector-emitter saturation voltage
Base-emitter voltage
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=50µA ,I
E
=0
I
C
=500µA ,I
C
=0
I
C
=0.5A, I
B
=50mA
I
C
=0.4A ; V
CE
=10V
V
EB
=4V; I
C
=0
V
CB
=200V; I
E
=0
I
C
=0.15A ; V
CE
=10V
I
C
=0.4A ; V
CE
=10V
I
C
=5mA ,I
B
=0
CONDITIONS
SYMBOL
2SD1264 2SD1264A
MIN
150
TYP.
MAX
UNIT
V
180
200
6
1.0
1.0
50
50
60
50
20
MHz
240
V
V
V
V
µA
µA
I
C
=0.5A; V
CE
=10V,f=10MHz
h
FE-1
Classifications
Q
60-140
P
100-240
2
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