SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1105
DESCRIPTION
·With TO-3PN package
·High frequency
·High power dissipation
APPLICATIONS
·Audio power amplifer applications
·DC-DC converters
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-6
-9
90
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SA1105
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-120
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.8
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-100
µA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-100
µA
h
FE
DC current gain
I
C
=-3A ; V
CE
=4V
50
180
f
T
Transition frequency
I
E
=1A ; V
CE
=-12V
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1105
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
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