HX6228-EHT datasheet, PDF - EEWORLD Datasheet

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HX6228-EHT: DescriptionStandard SRAM, 128KX8, 25ns, CMOS, DIE; Categorystorage storage; File Size147KB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HX6228-EHT Overview

Standard SRAM, 128KX8, 25ns, CMOS, DIE

HX6228-EHT Parametric

Parameter Name	Attribute value
package instruction	DIE,
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	25 ns
JESD-30 code	R-XUUC-N31
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	31
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIE
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	2.5 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal location	UPPER
Base Number Matches	1

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Military & Space Products

128K x 8 STATIC RAM—SOI

FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI)

0.7

µm

Process (L

eff

= 0.55

µm)

• Total Dose Hardness through 1x10

rad(SiO

)

• Neutron Hardness through 1x10

-2

• Asynchronous Operation

• Dynamic and Static Transient Upset Hardness

through 1x10

rad (Si)/s

• Dose Rate Survivability through <1x10

rad(Si)/s

• Soft Error Rate of <1x10

-10

upsets/bit-day in

Geosynchronous Orbit

• No Latchup

• CMOS or TTL Compatible I/O

• Single 5 V

10% Power Supply

OTHER

• Read/Write Cycle Times

≤

16 ns (Typical)

≤

25 ns (-55 to 125°C)

• Typical Operating Power <25 mW/MHz

HX6228

• Packaging Options

- 32-Lead Flat Pack (0.820 in. x 0.600 in.)

- 40-Lead Flat Pack (0.775 in. x 0.710 in.)

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high

performance 131,072 word x 8-bit static random access

memory with industry-standard functionality. It is fabricated

with Honeywell’s radiation hardened technology, and is

designed for use in systems operating in radiation environ-

ments. The RAM operates over the full military temperature

range and requires only a single 5 V

10% power supply. The

RAM is wire bond programmable for either TTL or CMOS

compatible I/O. Power consumption is typically less than 25

mW/MHz in operation, and less than 5 mW in the low power

disabled mode. The RAM read operation is fully asynchro-

nous, with an associated typical access time of 15 ns at 5V.

Honeywell’s enhancedSOI RICMOS™IV (Radiation Insen-

sitive CMOS) technology is radiation hardened through the

use of advanced and proprietary design, layout and process

hardening techniques. The RICMOS™ IV process is an

advanced 5-volt, SIMOX CMOS technology with a 150 Å

gate oxide and a minimum feature size of 0.7

µm

(0.55

µm

effective gate length—L

eff

). Additional features include

Honeywell’s proprietary SHARP planarization process, and

a lightly doped drain (LDD) structure for improved short

channel reliability. A 7 transistor (7T) memory cell is used for

superior single event upset hardening, while three layer

metal power bussing and the low collection volume SIMOX

substrate provide improved dose rate hardening.

HX6228-EHT Related Products

	HX6228-EHT	5962H9853701QXC	HX6228-EHC	HX6228-EFC	5962H9853702QXC	HX6228-ERT	HX6228-QHC
Description	Standard SRAM, 128KX8, 25ns, CMOS, DIE	Standard SRAM, 128KX8, 25ns, CMOS, FP-32	Standard SRAM, 128KX8, 25ns, CMOS, DIE	Standard SRAM, 128KX8, 25ns, CMOS, DIE	Standard SRAM, 128KX8, 25ns, CMOS, FP-32	Standard SRAM, 128KX8, 25ns, CMOS, DIE	Standard SRAM, 128KX8, 25ns, CMOS, DIE
package instruction	DIE,	DFP, FL32,.6	DIE,	DIE,	DFP, FL32,.6	DIE,	DIE
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	3A001.A.2.C	3A001.A.1.A	3A001.A.2.C	3A001.A.2.C	3A001.A.1.A	3A001.A.2.C	3A001.A.2.C
Maximum access time	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns
JESD-30 code	R-XUUC-N31	R-XDFP-F32	R-XUUC-N31	X-XUUC-N	R-XDFP-F32	X-XUUC-N	R-XUUC-N31
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIE	DFP	DIE	DIE	DFP	DIE	DIE
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR	UNSPECIFIED	RECTANGULAR
Package form	UNCASED CHIP	FLATPACK	UNCASED CHIP	UNCASED CHIP	FLATPACK	UNCASED CHIP	UNCASED CHIP
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Qualified	Not Qualified	Not Qualified	Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	NO LEAD	FLAT	NO LEAD	NO LEAD	FLAT	NO LEAD	NO LEAD
Terminal location	UPPER	DUAL	UPPER	UPPER	DUAL	UPPER	UPPER
Number of terminals	31	32	31	-	32	-	31
Output characteristics	3-STATE	3-STATE	3-STATE	-	3-STATE	-	3-STATE
Minimum standby current	2.5 V	2.5 V	2.5 V	-	2.5 V	-	2.5 V
Maker	-	-	Honeywell	Honeywell	Honeywell	Honeywell	Honeywell

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