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BFQ131T/R

Description
TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size74KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BFQ131T/R Overview

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal

BFQ131T/R Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4000 MHz
Base Number Matches1

BFQ131T/R Related Products

BFQ131T/R BFQ131-T/R BFQ131
Description TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SOT-54, 3 PIN, BIP RF Small Signal
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-based maximum capacity 1.2 pF 1.2 pF 1.2 pF
Collector-emitter maximum voltage 18 V 18 V 18 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 1.9 W 1.9 W 1.9 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 4000 MHz 4000 MHz 4000 MHz
ECCN code EAR99 - EAR99
Base Number Matches 1 1 -

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