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HY27UF084G2M-TPMS

Description
Flash, 512MX8, 25ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48
Categorystorage    storage   
File Size337KB,49 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance  
Download Datasheet Parametric View All

HY27UF084G2M-TPMS Overview

Flash, 512MX8, 25ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48

HY27UF084G2M-TPMS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP1
package instruction12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time25 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee6
length18.4 mm
memory density4294967296 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
typeNAND TYPE
width12 mm
Base Number Matches1
HY27UF084G2M Series
4Gbit (512Mx8bit) NAND Flash
4Gb NAND FLASH
HY27UF084G2M
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.7 / Dec. 2006
1
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