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V19E

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size54KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

V19E Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

V19E Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
FAST RECOVERY DIODE
V19
FEATURES
For high speed switching.
Diffused-junction. Glass passivated and
encapsulated.
OUTLINE DRAWING
φ
3.5 MAX
(0.14)
Unit in mm(inch)
Direction of polarity
φ
0.8
(0.03)
62MIN. (2.44)
5MAX
(0.2)
Type
V19B
V19C
V19E
V19G
(100V)
(200V)
(400V)
(600V)
Yellow
Black
Blue
Red
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Forward Current
Surge(Non-Repetitive) Forward Current
I
2
t Limit Value
Operating Junction Temperature
Storage Temperature
V
RRM
V
RSM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Type
V
V
A
A
A
2
s
°C
°C
V19B
100
200
V19C
200
300
V19E
400
500
29MIN.
(1.14)
Color of
cathode band
V19G
600
800
Single-phase half sine wave 180° conduction
1.0 TL = 80°C, Lead length = 10mm
(
30( Without PIV, 10ms conduction, Tj = 150°C start )
3.6( Time = 2 ~ 10ms, I = RMS value )
-65 ~ +150
-65 ~ +150
Notes
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T
L
=25°C)
Items
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Steady State Thermal Impedance
Symbols
I
RRM
V
FM
trr
R
th(j-a)
R
th(j-l)
Units
µA
V
µs
°C/W
Min.
-
-
-
-
Typ.
2.0
-
-
-
Max.
10
1.2
0.2
80
50
Test Conditions
Rated V
RRM
I
FM
=1.0 Ap, Single-phase half sine
wave 1 cycle
I
F
=2mA, V
R
=-15V
Lead length = 10 mm
Symbol(Blue)
PDE-V19-0
Cathode band
29MIN.
(1.14)
)

V19E Related Products

V19E V19B V19C
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 100 V 200 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maker - Hitachi (Renesas ) Hitachi (Renesas )
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