FAST RECOVERY DIODE
V19
FEATURES
•
For high speed switching.
•
Diffused-junction. Glass passivated and
encapsulated.
OUTLINE DRAWING
φ
3.5 MAX
(0.14)
Unit in mm(inch)
Direction of polarity
φ
0.8
(0.03)
62MIN. (2.44)
5MAX
(0.2)
Type
V19B
V19C
V19E
V19G
(100V)
(200V)
(400V)
(600V)
Yellow
Black
Blue
Red
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Forward Current
Surge(Non-Repetitive) Forward Current
I
2
t Limit Value
Operating Junction Temperature
Storage Temperature
V
RRM
V
RSM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Type
V
V
A
A
A
2
s
°C
°C
V19B
100
200
V19C
200
300
V19E
400
500
29MIN.
(1.14)
Color of
cathode band
V19G
600
800
Single-phase half sine wave 180° conduction
1.0 TL = 80°C, Lead length = 10mm
(
30( Without PIV, 10ms conduction, Tj = 150°C start )
3.6( Time = 2 ~ 10ms, I = RMS value )
-65 ~ +150
-65 ~ +150
Notes
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T
L
=25°C)
Items
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Steady State Thermal Impedance
Symbols
I
RRM
V
FM
trr
R
th(j-a)
R
th(j-l)
Units
µA
V
µs
°C/W
Min.
-
-
-
-
Typ.
2.0
-
-
-
Max.
10
1.2
0.2
80
50
Test Conditions
Rated V
RRM
I
FM
=1.0 Ap, Single-phase half sine
wave 1 cycle
I
F
=2mA, V
R
=-15V
Lead length = 10 mm
Symbol(Blue)
PDE-V19-0
Cathode band
29MIN.
(1.14)
)
V19
Forward characteristics
100
Single-phase half sine wave
Conduction : 10ms 1 Cycle
Max. average forward power dissipation
(Resistive or inductive load)
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
DC
1.6
PEAK FORWARD CURRENT (A)
10
1.2
Single-phase
( 50Hz )
TL=150˚C
TL=25˚C
0.8
1
0.4
0.1
0
1
2
3
4
0
0
0.5
1.0
1.5
PEAK FORWARD VOLTAGE DROP (V)
AVERAGE FORWARD CURRENT (A)
Max. allowable ambient temperature
(Resistive or inductive load)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
200
Single-phase half sine wave
180˚
conduction (50Hz)
Max. allowable lead temperature
(Resistive or inductive load)
200
160
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
Single-phase half sine wave
180˚
conduction (50Hz)
160
Lead length
L=10mm
20mm
25mm
120
Lead length
L=10mm
20mm
25mm
L
L
120
80
80
L
L
40
PC board (100x180x1.6t)
Copper foil ( 5.5)
40
Lead temp
PC board
(100x180x1.6t)
Copper foil ( 5.5)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
AVERAGE FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
Surge forward current characteristic
( Non-repetitive )
60
Surge current
peak value
Typ. reverse current vs. junction temperature
1000
Note : at V
RRM
SURGE FORWARD CURRENT (A)
50
10ms
40
REVERSE CURRENT (µA)
100
1 cycle
100
30
Without PIV
20
With PIV
10
10
0
1
10
CYCLES
1
0
50
100
150
200
JUNCTION TEMPERATURE (˚C)
PDE-V19-0
V19
Steady state thermal impedance
140
Transient thermal impedance
200
Lead length = 10 mm
STEADY STATE THERMAL IMPEDANCE (˚C/W)
120
100
80
Rth(j - l)
60
40
20
0
Ambient temp. measured point
Lead temp.
Lead
measured point
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
15
Lead
length
Rth(j - a)
TRANSIENT THERMAL IMPEDANCE (˚C/W)
100
Rth(j - a)
Rth(j - l)
10
1
20
PC board
(100×180×1.6t)
Note : PC. board mounted
PC. board( 100
×
180
×
1.6t)
Copper foil ( 5.5 )
0.1
0.001
0.01
0.1
TIME (s)
1
10
100
0
10
20
30
LEAD LENGTH (mm)
Reverse recovery time(trr) test circuit
50µF
- 15V
22µs
D.U.T
2mA
15V
600Ω
0
I
rp
t
rr
t
0.1I
rp
PDE-V19-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
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