ST 2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G, L , according to its DC current gain. As
complementary
type
the
NPN
transistor
ST 2SC1815 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25℃)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
B
P
tot
T
j
T
S
Value
50
50
5
150
50
400
125
-65 to +150
Unit
V
V
V
mA
mA
mW
O
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SA1015
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at -V
CE
=6V, -I
C
=2mA
Current Gain Group O
Y
G
L
at -V
CE
=6V, -I
C
=150mA
Collector Base Breakdown Voltage
at -I
C
=100μA
Collector Emitter Breakdown Voltage
at -I
C
=10mA
Emitter Base Breakdown Voltage
at -I
E
=10μA
Collector Cutoff Current
at -V
CB
=50V
Emitter Cutoff Current
at -V
EB
=5V
Collector Saturation Voltage
at -I
C
=100mA, -I
B
=10mA
Base Saturation Voltage
at -I
C
=100mA, -I
B
=10mA
Gain Bandwidth Product
at -V
CE
=10V, -I
C
=1mA
Output Capacitance
at -V
CB
=10V, f=1MHz
Noise Figure
at -V
CE
=6V, -I
C
=0.1mA
at
f=100Hz, R
S
=10KΩ
NF
-
0.5
6
dB
C
OB
-
4
7
pF
f
T
80
-
-
MHz
-V
BE(sat)
-
-
1.1
V
-V
CE(sat)
-
0.1
0.3
V
-I
EBO
-
-
0.1
μA
-I
CBO
-
-
0.1
μA
-V
(BR)EBO
5
-
-
V
-V
(BR)CEO
50
-
-
V
-V
(BR)CBO
50
-
-
V
h
FE
h
FE
h
FE
h
FE
h
FE
70
120
200
350
25
-
-
-
-
-
140
240
400
700
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
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