NM27LV512VE300 datasheet, PDF - EEWORLD Datasheet

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NM27LV512VE300: DescriptionIC 64K X 8 OTPROM, 300 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM; Categorystorage storage; File Size650KB，12 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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NM27LV512VE300 Overview

IC 64K X 8 OTPROM, 300 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM

NM27LV512VE300 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	QCCJ, LDCC32,.5X.6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	300 ns
I/O type	COMMON
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.995 mm
memory density	524288 bit
Memory IC Type	OTP ROM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	3.56 mm
Maximum standby current	0.00002 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11.455 mm
Base Number Matches	1

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	NM27LV512VE300	NM27LV512T250	NM27LV512Q300	NM27LV512QE300	NM27LV512T300	NM27LV512TE300	NM27LV512QE250	NM27LV512Q200	NM27LV512Q250
Description	IC 64K X 8 OTPROM, 300 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM	IC 64K X 8 OTPROM, 250 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 UVPROM, 200 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	QCCJ, LDCC32,.5X.6	TSOP1, TSSOP32,.8,20	WDIP, DIP28,.6	WDIP, DIP28,.6	TSOP1, TSSOP32,.8,20	TSOP1, TSSOP32,.8,20	WDIP, DIP28,.6	WDIP, DIP28,.6	WDIP, DIP28,.6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	300 ns	250 ns	300 ns	300 ns	300 ns	300 ns	250 ns	200 ns	250 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQCC-J32	R-PDSO-G32	R-GDIP-T28	R-GDIP-T28	R-PDSO-G32	R-PDSO-G32	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bi
Memory IC Type	OTP ROM	OTP ROM	UVPROM	UVPROM	OTP ROM	OTP ROM	UVPROM	UVPROM	UVPROM
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	32	32	28	28	32	32	28	28	28
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C	70 °C	70 °C
organize	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	QCCJ	TSOP1	WDIP	WDIP	TSOP1	TSOP1	WDIP	WDIP	WDIP
Encapsulate equivalent code	LDCC32,.5X.6	TSSOP32,.8,20	DIP28,.6	DIP28,.6	TSSOP32,.8,20	TSSOP32,.8,20	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	IN-LINE, WINDOW	IN-LINE, WINDOW	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	IN-LINE, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A
Maximum slew rate	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	NO	NO	YES	YES	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	1.27 mm	0.5 mm	2.54 mm	2.54 mm	0.5 mm	0.5 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	QUAD	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	-	-	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Base Number Matches	1	1	1	1	1	1	-	-	-

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