EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

NM27LV512TE300

Description
IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM
Categorystorage    storage   
File Size650KB,12 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric Compare

NM27LV512TE300 Overview

IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM

NM27LV512TE300 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionTSOP1, TSSOP32,.8,20
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time300 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density524288 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00002 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
Base Number Matches1

NM27LV512TE300 Related Products

NM27LV512TE300 NM27LV512VE300 NM27LV512T250 NM27LV512Q300 NM27LV512QE300 NM27LV512T300 NM27LV512QE250 NM27LV512Q200 NM27LV512Q250
Description IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM IC 64K X 8 OTPROM, 300 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM IC 64K X 8 OTPROM, 250 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM IC 64K X 8 UVPROM, 200 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 TSOP1, TSSOP32,.8,20 WDIP, DIP28,.6 WDIP, DIP28,.6 TSOP1, TSSOP32,.8,20 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 300 ns 300 ns 250 ns 300 ns 300 ns 300 ns 250 ns 200 ns 250 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G32 R-PQCC-J32 R-PDSO-G32 R-GDIP-T28 R-GDIP-T28 R-PDSO-G32 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
memory density 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bi
Memory IC Type OTP ROM OTP ROM OTP ROM UVPROM UVPROM OTP ROM UVPROM UVPROM UVPROM
memory width 8 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 32 32 32 28 28 32 28 28 28
word count 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C 70 °C 70 °C
organize 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
encapsulated code TSOP1 QCCJ TSOP1 WDIP WDIP TSOP1 WDIP WDIP WDIP
Encapsulate equivalent code TSSOP32,.8,20 LDCC32,.5X.6 TSSOP32,.8,20 DIP28,.6 DIP28,.6 TSSOP32,.8,20 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE CHIP CARRIER SMALL OUTLINE, THIN PROFILE IN-LINE, WINDOW IN-LINE, WINDOW SMALL OUTLINE, THIN PROFILE IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A
Maximum slew rate 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES NO NO YES NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING J BEND GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 0.5 mm 1.27 mm 0.5 mm 2.54 mm 2.54 mm 0.5 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL QUAD DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 - - -
Maker - National Semiconductor(TI ) National Semiconductor(TI ) - - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1037  465  1697  727  747  21  10  35  15  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号