NM27LV512Q250 datasheet, PDF - EEWORLD Datasheet

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NM27LV512Q250: DescriptionIC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM; Categorystorage storage; File Size650KB，12 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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NM27LV512Q250 Overview

IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM

NM27LV512Q250 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	WDIP, DIP28,.6
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	250 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	524288 bi
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	WDIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE, WINDOW
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.00002 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

NM27LV512Q250 Related Products

	NM27LV512Q250	NM27LV512VE300	NM27LV512T250	NM27LV512Q300	NM27LV512QE300	NM27LV512T300	NM27LV512TE300	NM27LV512QE250	NM27LV512Q200
Description	IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 OTPROM, 300 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM	IC 64K X 8 OTPROM, 250 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 UVPROM, 300 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 OTPROM, 300 ns, PDSO32, EIAJ, PLASTIC, TSOP1-32, Programmable ROM	IC 64K X 8 UVPROM, 250 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM	IC 64K X 8 UVPROM, 200 ns, CDIP28, CERAMIC, DIP-28, Programmable ROM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	WDIP, DIP28,.6	QCCJ, LDCC32,.5X.6	TSOP1, TSSOP32,.8,20	WDIP, DIP28,.6	WDIP, DIP28,.6	TSOP1, TSSOP32,.8,20	TSOP1, TSSOP32,.8,20	WDIP, DIP28,.6	WDIP, DIP28,.6
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	250 ns	300 ns	250 ns	300 ns	300 ns	300 ns	300 ns	250 ns	200 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-GDIP-T28	R-PQCC-J32	R-PDSO-G32	R-GDIP-T28	R-GDIP-T28	R-PDSO-G32	R-PDSO-G32	R-GDIP-T28	R-GDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	524288 bi	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	UVPROM	OTP ROM	OTP ROM	UVPROM	UVPROM	OTP ROM	OTP ROM	UVPROM	UVPROM
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	28	32	32	28	28	32	32	28	28
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C	70 °C
organize	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	WDIP	QCCJ	TSOP1	WDIP	WDIP	TSOP1	TSOP1	WDIP	WDIP
Encapsulate equivalent code	DIP28,.6	LDCC32,.5X.6	TSSOP32,.8,20	DIP28,.6	DIP28,.6	TSSOP32,.8,20	TSSOP32,.8,20	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE, WINDOW	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	IN-LINE, WINDOW	IN-LINE, WINDOW	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	IN-LINE, WINDOW	IN-LINE, WINDOW
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A
Maximum slew rate	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	YES	YES	NO	NO	YES	YES	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	J BEND	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	0.5 mm	2.54 mm	2.54 mm	0.5 mm	0.5 mm	2.54 mm	2.54 mm
Terminal location	DUAL	QUAD	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	-	-	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）
Base Number Matches	-	1	1	1	1	1	1	-	-

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