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BS250-TR1

Description
Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-92-18RM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size69KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BS250-TR1 Overview

Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-92-18RM, 3 PIN

BS250-TR1 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeBCY
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage45 V
Maximum drain current (ID)0.18 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-18
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TP0610L
TP0610T
VP0610L
VP0610T
BS250
V
(BR)DSS
Min (V)
−60
−60
−60
−60
−45
r
DS(on)
Max (W)
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
14 @ V
GS
=
−10
V
V
GS(th)
(V)
−1
to
−2.4
−1
to
−2.4
−1
to
−3.5
−1
to
−3.5
−1
to
−3.5
I
D
(A)
−0.18
−0.12
−0.18
−0.12
−0.18
FEATURES
D
D
D
D
D
High-Side Switching
Low On-Resistance: 8
W
Low Threshold:
−1.9
V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-226AA
(TO-92)
S
G
1
Device Marking
Front View
TP0610L
“S” TP
0610L
xxll
TO-92-18RM
(TO-18 Lead Form)
D
G
1
Device Marking
Front View
BS250
2
“S” BS
250
xxll
“S” = Siliconix Logo
xxll
= Date Code
G
1
3
S
2
D
TO-236
(SOT-23)
Marking Code:
TP0610T: TOwll
VP0610T: VOwll
w
= Week Code
lL
= Lot Traceability
Top View
TP0610T
VP0610T
2
D
3
Top View
TP0610L
VP0610L
VP0610L
“S” VP
0610L
xxll
S
3
Top View
BS250
“S” = Siliconix Logo
xxll
= Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TP0610L
−60
"30
−0.18
−0.11
−0.8
0.8
0.32
156
TP0610T
−60
"30
−0.12
−0.07
−0.4
0.36
0.14
350
VP0610L
−60
"30
−0.18
−0.11
−0.8
0.8
0.32
156
−55
to 150
VP0610T
−60
"30
−0.12
−0.07
−0.4
0.36
0.14
350
BS250
−45
"25
−0.18
Unit
V
A
0.83
150
Power Dissipation
Thermal Resistance, Junction-to-Ambient
W
_C/W
_C
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
www.vishay.com
1

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BS250-TR1 TP0610L-TR1 BS250 SB36890\E6 VP0610TT1 TP0610TT1 VP0610L-TR1
Description Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18, TO-92-18RM, 3 PIN mosfet small signal 60v 0.18a 0.8W mosfet small signal P-channel 60v 0.25a Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
Maker Vishay Vishay - Vishay Vishay -
Parts packaging code BCY TO-92 - SOT-23 SOT-23 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 - 3 3 3
Reach Compliance Code unknown unknow - unknown unknown unknown
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD - LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 45 V 60 V - 60 V 60 V 60 V
Maximum drain current (ID) 0.18 A 0.18 A - 0.12 A 0.12 A 0.18 A
Maximum drain-source on-resistance 14 Ω 10 Ω - 10 Ω 10 Ω 10 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-18 TO-226AA - TO-236AB TO-236AB TO-226AA
JESD-30 code O-PBCY-W3 O-PBCY-W3 - R-PDSO-G3 R-PDSO-G3 O-PBCY-W3
Number of components 1 1 - 1 1 1
Number of terminals 3 3 - 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - RECTANGULAR RECTANGULAR ROUND
Package form CYLINDRICAL CYLINDRICAL - SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL - P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO NO - YES YES NO
Terminal form WIRE WIRE - GULL WING GULL WING WIRE
Terminal location BOTTOM BOTTOM - DUAL DUAL BOTTOM
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON SILICON
Maximum feedback capacitance (Crss) - 5 pF - 5 pF 5 pF 5 pF
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