M27V102
1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM
NOT FOR NEW DESIGN
s
s
M27V102 is replaced by the M27W102
LOW VOLTAGE READ OPERATION:
3V to 3.6V
ACCESS TIME: 90ns
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20µA
1
1
40
40
s
s
s
s
s
PROGRAMMING VOLTAGE: 12.75V
±
0.25V
PROGRAMMING TIME: 100µs/word
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 8Ch
FDIP40W (F)
PDIP40 (B)
DESCRIPTION
The M27V102 is a low voltage 1 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 65,536
words by 16 bits.
The M27V102 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27V102 is offered in PDIP40, PLCC32 and
TSOP40 (10 x 14 mm) packages.
PLCC44 (K)
TSOP40 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
16
A0-A15
16
Q0-Q15
P
E
G
M27V102
VSS
AI01912
July 2000
This is information on a product still in production but not recommended for new designs.
1/15
M27V102
Figure 2A. DIP Connections
VPP
E
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
VSS
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
G
1
40
2
39
3
38
4
37
5
36
6
35
7
34
8
33
9
32
10
31
M27V102
11
30
12
29
13
28
14
27
15
26
16
25
17
24
18
23
19
22
20
21
AI01913
Figure 2B. LCC Connections
VCC
P
NC
A15
A14
A13
A12
A11
A10
A9
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
Q12
Q11
Q10
Q9
Q8
VSS
NC
Q7
Q6
Q5
Q4
Q13
Q14
Q15
E
VPP
NC
VCC
P
NC
A15
A14
1 44
A13
A12
A11
A10
A9
VSS
NC
A8
A7
A6
A5
12
M27V102
34
23
Q3
Q2
Q1
Q0
G
NC
A0
A1
A2
A3
A4
AI01914
Figure 2C. TSOP Connections
Table 1. Signal Names
A0-A15
Address Inputs
Data Outputs
Chip Enable
Output Enable
Program
Program Supply
Supply Voltage
Ground
Not Connected Internally
A9
A10
A11
A12
A13
A14
A15
NC
P
VCC
VPP
E
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
1
40
10
11
M27V102
(Normal)
31
30
20
21
AI01915
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
G
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSS
Q0-Q15
E
G
P
V
PP
V
CC
V
SS
NC
2/15
M27V102
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
BIAS
T
STG
V
IO (2)
V
CC
V
A9 (2)
V
PP
Parameter
Ambient Operating Temperature
(3)
Temperature Under Bias
Storage Temperature
Input or Output Voltage (except A9)
Supply Voltage
A9 Voltage
Program Supply Voltage
Value
–40 to 125
–50 to 125
–65 to 150
–2 to 7
–2 to 7
–2 to 13.5
–2 to 14
Unit
°C
°C
°C
V
V
V
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
CC
+0.5V with possible overshoot to V
CC
+2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = V
IH
or V
IL
, V
ID
= 12V
±
0.5V.
E
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
V
IL
G
V
IL
V
IH
X
V
IL
X
X
V
IL
P
V
IH
X
V
IL
Pulse
V
IH
X
X
V
IH
A9
X
X
X
X
X
X
V
ID
V
PP
V
CC
or V
SS
V
CC
or V
SS
V
PP
V
PP
V
PP
V
CC
or V
SS
V
CC
Q15-Q0
Data Out
Hi-Z
Data In
Data Output
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
V
IL
V
IH
Q7
0
1
Q6
0
0
Q5
1
0
Q4
0
0
Q3
0
1
Q2
0
1
Q1
0
0
Q0
0
0
Hex Data
20h
8Ch
Note: Outputs Q15-Q8 are set to ’0’.
3/15
M27V102
Table 5. AC Measurement Conditions
High Speed
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
≤
10ns
0 to 3V
1.5V
Standard
≤
20ns
0.4V to 2.4V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
3V
1.5V
0V
DEVICE
UNDER
TEST
2.0V
0.8V
AI01822
1N914
3.3kΩ
Standard
2.4V
OUT
CL
0.4V
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance
(1)
(T
A
= 25
°C,
f = 1 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Condit ion
V
IN
= 0V
V
OUT
= 0V
Min
Max
6
12
Unit
pF
pF
Note: Sampled only, not 100% tested.
DEVICE OPERATION
The operating modes of the M27V102 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for V
PP
and 12V on A9 for Electronic
Signature.
Read Mode
The M27V102 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(t
AVQV
) is equal to the delay from E to output
(t
ELQV
). Data is available at the output after a delay
of t
OE
from the falling edge of G, assuming that E
has been low and the addresses have been stable
for at least t
AVQV
-t
GLQV
.
Standby Mode
The M27V102 has a standby mode which reduces
the active current from 15mA to 20µA with low volt-
age operation V
CC
≤
3.6V, see Read Mode DC
Characteristics table for details. The M27V102 is
placed in the standby mode by applying a TTL
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
4/15
M27V102
Table 7. Read Mode DC Characteristics
(1)
(TA = 0 to 70
°C
or –40 to 85
°C;
V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
IL
V
IH (2)
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
I
OL
= 2.1mA
I
OH
= –400µA
I
OH
= –100µA
2.4
V
CC
– 0.7V
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
≤
3.6V
E = V
IH
E > V
CC
– 0.2V, V
CC
≤
3.6V
V
PP
= V
CC
–0.3
2
Min
Max
±10
±10
15
1
20
10
0.8
V
CC
+ 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°C
or –40 to 85
°C;
V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
M27V102
Symbol
Alt
Parameter
Test Condition
-90
(3)
Min
t
AVQV
t
ELQV
t
GLQV
t
EHQZ (2)
t
GHQZ (2)
t
AXQX
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Address Transition to Output
Transition
E = V
IL
, G = V
IL
G = V
IL
E = V
IL
G = V
IL
E = V
IL
E = V
IL
, G = V
IL
0
0
0
Max
90
90
45
30
30
0
0
0
-100
Min
Max
100
100
50
30
30
ns
ns
ns
ns
ns
ns
Unit
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
5/15
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