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KSA1182YMTF_NL

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size56KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

KSA1182YMTF_NL Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

KSA1182YMTF_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
KSA1182
KSA1182
Low Frequency Power Amplifier
• Complement to KSC2859
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-35
-30
-5
-500
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= -35V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -6V, I
C
= -400mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V , I
C
= -100mA
V
CE
= -6V, I
C
= -20mA
V
CB
= -6V, I
E
= 0, f=1MHz
70
25
-0.1
-0.8
200
13
Min.
Typ.
Max.
-0.1
-0.1
240
-0.25
-1.0
V
V
MHz
pF
Units
µA
µA
h
FE
Classification
Classification
h
FE1
Marking
O
70 ~ 140
Y
120 ~ 240
F 10
h
FE
grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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