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IRFPG60PBF

Description
16A, 600V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFPG60PBF Overview

16A, 600V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC

IRFPG60PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRFPG60PBF Related Products

IRFPG60PBF IRFPG60
Description 16A, 600V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
Shell connection DRAIN DRAIN
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 16 A 16 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-247AC TO-247AC
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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