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K4E160811C-BC600

Description
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
Categorystorage    storage   
File Size257KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4E160811C-BC600 Overview

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

K4E160811C-BC600 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-J28
length18.42 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width7.62 mm
Base Number Matches1
K4E170811C, K4E160811C
K4E170812C, K4E160812C
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K
Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of
this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh
operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to real-
ize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer and personal
computer.
FEATURES
Part Identification
- K4E170811C-B(F) (5V, 4K Ref.)
- K4E160811C-B(F) (5V, 2K Ref.)
- K4E170812C-B(F) (3.3V, 4K Ref.)
- K4E160812C-B(F) (3.3V, 2K Ref.)
Active Power Dissipation
Unit : mW
Speed
4K
-50
-60
324
288
3.3V
2K
396
360
4K
495
440
5V
2K
605
550
• Extended Data Out Mode operation
(Fast page mode with Extended Data Out)
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
Refresh Cycles
Part
NO.
K4E170811C
K4E170812C
K4E160811C
K4E160812C
V
CC
5V
3.3V
5V
3.3V
2K
32ms
Refresh
cycle
4K
Refresh period
Normal
64ms
128ms
L-ver
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Data in
Refresh Timer
Refresh Control
Refresh Counter
Memory Array
2,097,152 x8
Cells
Row Decoder
Sense Amps & I/O
Buffer
DQ0
to
DQ7
Performance Range
Speed
-50
-60
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
Remark
5V/3.3V
5V/3.3V
A0-A11
(A0 - A10)
*1
A0 - A8
(A0 - A9)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Data out
Buffer
OE
Note)
*1
: 2K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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