INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BU112
DESCRIPTION
·Collector-Emitter
Voltage-
:V
CEX(SUS)
= 550V(Min.)
·Collector
Current- I
C
= 10A
APPLICATIONS
·Designed
for deflection circuits applications in color TV
receivers fitted with 90℃ kinescope.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Emitter Voltage
V
CEX
Collector-Emitter Voltage V
BE
= -5V
V
EBO
Emitter-Base Voltage
I
C
I
B
B
Collector Current-Continuous
Base Current-Continuous
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VALUE
UNIT
550
V
550
V
10
V
10
A
4
A
60
W
℃
℃
200
-65~200
P
C
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
T
j
T
stg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.9
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU112
MAX
UNIT
V
(BR)EBO
Collector-Base Breakdown Voltage
I
E
= 30mA; I
C
= 0
10
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 10A; I
B
= 2A
3.0
V
I
CEX
Collector Cutoff Current
V
CE
= 550V; V
BE
= -5V
10
mA
h
FE
DC Current Gain
I
C
= 6A; V
CE
= 2V
7
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A; V
CE
= 4V
6
MHz
C
OB
Collector Output Capacitance
t
f
Fall Time
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I
E
= 0; V
CB
= 10V; f= 1MHz
I
C
=6A; I
B1
= 1A; V
BE
= -3V
250
pF
1.0
μs
isc Website：www.iscsemi.cn
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