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MT46V8M16P-6:D

Description
DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Categorystorage    storage   
File Size3MB,93 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT46V8M16P-6:D Overview

DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

MT46V8M16P-6:D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP
package instructionTSSOP,
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
Base Number Matches1
128Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V32M4 – 8 Meg x 4 x 4 banks
MT46V16M8 – 4 Meg x 8 x 4 banks
MT46V8M16 – 2 Meg x 16 x 4 banks
For the latest data sheet revisions, please refer to the Micron
®
Web site:
www.micron.com/ddr2
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR 400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
• Configuration
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package – OCPL
66-pin TSOP
66-pin TSOP (lead-free)
1
• Timing – Cycle Time
5ns @ CL = 3 (DDR400)
6ns @ CL = 2.5 (DDR333)
2
7.5ns @ CL = 2 (DDR266)
7.5ns @ CL = 2 (DDR266A)
7.5ns @ CL = 2.5 (DDR266B)
• Self Refresh
Standard
Low Power Self Refresh
• Temperature Rating
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
• Revision
Marking
32M4
16M8
8M16
TG
P
-5B
-6T
-75E
-75Z
-75
None
L
None
IT
:A
Notes: 1. Contact Micron for availability of lead-free
products.
2. Not available in x16 configuration.
Table 1:
Configuration Addressing
32 Meg x 4
8 Meg x 4 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
2K(A0–A9,A11)
16 Meg x 8
4 Meg x 8 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
1K(A0–A9)
8 Meg x 16
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
512(A0–A8)
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
Table 2:
Key Timing Parameters
CL = CAS (READ) latency; minimum clock rate @ CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and CL = 3 (-5B).
Clock Rate
Access
Window
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
DQS–DQ
Skew
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
Speed Grade
-5B
-6
6T
-75E/75Z
-75
CL = 2
133 MHz
133 MHz
133 MHz
133 MHz
100 MHz
CL = 2.5
167 MHz
167 MHz
167 MHz
133 MHz
133 MHz
CL = 3
200 MHz
N/A
N/A
N/A
N/A
Data-Out Window
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
09005aef8074a655
128MBDDRx4x8x16_1.fm - Rev. J 4/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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