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BAT82AMO

Description
DIODE 0.03 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size28KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BAT82AMO Overview

DIODE 0.03 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BAT82AMO Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current0.15 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.03 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse current0.2 µA
Maximum reverse recovery time0.001 µs
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20
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