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1N6302A

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size617KB,6 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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1N6302A Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

1.5KE6.8 thru 1.5KE550CA
and 1N6267 thru 1N6303A
Transient Voltage Suppressors
Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated junction
1500W peak pulse power capabililty on 10/1000us waveform,
repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Very fast response time
High temperature soldering guaranteed: 265
o
C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Includes 1N6267 thru 1N6303A
Mechanical Data
Case: Molded plastic body over passivated junction
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: For unidirectional types the color band denotes the
cathode, which is positive with respect to the anode under
normal TVS operation
Mounting Position: Any
Weight: 0.045oz., 1.2g
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440
(e.g. 1.5KE6.8C, 1.5KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
(T
A
=25
o
C unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000
u
s waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Steady state power dissipation
at T
L
=75
o
C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(3)
Maximum instantaneous forward voltage
at 100A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
Value
Minimum 1500
See Next Table
6.5
200
3.5/5.0
20
75
-55 to +175
Unit
W
A
W
Amps
Volts
o
C/W
C/W
o
o
C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25
o
C per Fig. 2
2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40 mm) per Fig. 5
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
4. V
F
=3.5 V for devices of V
(BR)
<220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
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