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UNR911LG

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size621KB,20 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR911LG Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

UNR911LG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR911xG Series
Silicon PNP epitaxial planar type
For digital circuits
Features
Package
Resistance by Part Number
UNR9110G
UNR9111G
UNR9112G
UNR9113G
UNR9114G
UNR9115G
UNR9116G
UNR9117G
UNR9118G
UNR9119G
UNR911AG
UNR911BG
UNR911CG
UNR911DG
UNR911EG
UNR911FG
UNR911HG
UNR911LG
UNR911MG
UNR911NG
UNR911TG
UNR911VG
en
an
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
ce
/D
Marking Symbol (R
1
)
6L
47 kΩ
6A
10 kΩ
6B
22 kΩ
6C
47 kΩ
6D
10 kΩ
6E
10 kΩ
6F
4.7 kΩ
6H
22 kΩ
6I
0.51 kΩ
6K
1 kΩ
6X
100 kΩ
6Y
100 kΩ
6Z
6M
47 kΩ
6N
47 kΩ
6O
4.7 kΩ
6P
2.2 kΩ
6Q
4.7 kΩ
EI
2.2 kΩ
EW
4.7 kΩ
EY
22 kΩ
FC
2.2 kΩ
ai
Collector-base voltage (Emitter open)
M
Pl
e
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Publication date: July 2007
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as
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ht w c
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:// g nt n ce c g
pa U in tin t e fo
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so a d t d
e Pr
od
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uc
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d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
M
Di ain
sc te
on na
tin nc
ue e/
d
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing.
Code
SSMini3-F3
Pin Name
1: Base
2: Emitter
3: Collector
R
1
B
R
2
Internal Connection
C
E
is
co
nt
in
ue
Rating
−50
−50
125
125
Unit
V
V
nt
−100
mA
mW
°C
°C
−55
to
+125
SJH00222AED
1
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